Polycrystalline silicon rod, method for producing polycrystalline silicon rod, and single-crystalline silicon
US10865498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the present invention, once a polycrystalline silicon rod is grown by the Siemens process, the polycrystalline silicon rod is heat-treated within a temperature range from 750° C. to 900° C. to relieve residual stress in the crystal. According to the experiment of the present inventors, residual stress can be relieved satisfactorily by heat treatment at the above-described low temperature, and in addition, metal contamination cannot be induced and the physical properties of the polycrystalline silicon rod cannot be changed. The above heat treatment can be conducted inside a furnace used to grow the polycrystalline silicon rod, and can also be conducted outside a furnace used to grow the polycrystalline silicon rod. According to the present invention, a polycrystalline silicon rod with residual stress (σ) of not more than +20 MPa evaluated by a 2θ-sin2Ψ diagram can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.