Extreme ultraviolet photolithography method with developer composition
US10866511B2 · kind B2 · utility
8Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2017 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.