Method for controlling plasma in semiconductor fabrication
US10867787B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Aug 22, 2039 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B1/044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.