Semiconductor device and method
US10867845B2 · kind B2 · utility
2Cited by
22References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.