Contact structure and semiconductor device and method of forming the same
US10867851B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Feb 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact structure and semiconductor device and method of forming the same are disclosed. The contact structure includes a first metal layer and a second metal layer. The first metal layer is disposed in a first dielectric layer. The second metal layer is disposed in a second dielectric layer and extended into the first dielectric layer to electrically connect the first metal layer, wherein the first metal layer and the second metal layer include different metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.