Method of cutting substrate and method of singulating semiconductor chips
US10867857B2 · kind B2 · utility
1Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Aug 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.