Patent · US Active

Semiconductor devices and methods for forming a semiconductor device

US10867893B2 · kind B2 · utility

0Cited by

4References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Sergey Ananiev · Ottobrunn, DE
Robert Bauer · San Diego, US
Heinrich Koerner · Bruckmühl, DE
Yik Yee Tan · Melaka City, MY
Juergen Walter · Regensburg, DE

Key dates

Filing date	Aug 24, 2017
Grant date	Dec 15, 2020
Priority date	—
Expiry date	Aug 24, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/85365
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.