Semiconductor device
US10867923B2 · kind B2 · utility
1Cited by
40References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Sep 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an element layer, a plurality of first interconnect lines on the element layer, a first insulation layer including carbon having a uniform concentration distribution between the first interconnect lines, a plurality of second interconnect lines spaced from the first interconnect lines, and a second insulation layer between the second interconnect lines. An air spacing is included between the second interconnect lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.