Semiconductor device and method of forming the same
US10867999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Feb 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first well and a first dummy cell region. The substrate has a plurality fins disposed therein, and the fins are extended along a first direction. The first well is disposed in the substrate, and a dummy cell region is disposed at a first boundary of the first well. The first dummy cell region includes a first isolation structure and a plurality of first gate structures. The first SDB is disposed in the substrate, along a second direction perpendicular to the first direction to penetrate through one of the fins, and the first gate structures are disposed over the first SDB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.