Semiconductor device
US10868163B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Apr 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A semiconductor device includes first and second nitride semiconductor layers, a first electrode electrically connected to the first nitride semiconductor layer, a second electrode electrically connected to the first nitride semiconductor layer, a gate electrode between the first and second electrodes, a first field plate electrode electrically connected to the first electrode, a second field plate electrode between the gate electrode and the second electrode and electrically connected to the first electrode, a first conductive layer on the gate electrode, and a second conductive layer on the first conductive layer. A distance between the gate electrode and the second field plate electrode in a lateral direction is shorter than a distance between the first conductive layer and the second field plate electrode in the lateral direction, and is equal to or shorter than a distance between the second conductive layer and the second field plate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.