Hung Hung
45Patents
2h-index
32Co-inventors
53Inventor score
Filing activity: Aug 23, 2011 → Oct 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8785943B2 | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer | Electricity | 5 | Active |
| US10651276B2 | Semiconductor device | Electricity | 2 | Active |
| US9627489B2 | Semiconductor device | Electricity | 1 | Active |
| US11264899B2 | Semiconductor device | Emerging Cross-Sectional Technologies | 1 | Active |
| US8952401B2 | Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer | Electricity | 1 | Active |
| US10771057B1 | Semiconductor device | Electricity | 1 | Active |
| US9202873B2 | Semiconductor wafer for semiconductor device having a multilayer | Electricity | 1 | Active |
| US8928000B2 | Nitride semiconductor wafer including different lattice constants | Electricity | 1 | Active |
| US10998433B2 | Semiconductor device | Electricity | 1 | Active |
| US8525194B2 | Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer | Electricity | 1 | Active |
| US9006706B2 | Semiconductor light emitting device | Electricity | 1 | Active |
| US10868163B2 | Semiconductor device | Electricity | 1 | Active |
| US10707312B2 | Semiconductor device | Electricity | 1 | Active |
| US10763352B2 | Semiconductor device | Electricity | 1 | Active |
| US12170316B2 | Nitride semiconductor device with element isolation area | Electricity | 0 | Active |
| US8809101B2 | Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer | Electricity | 0 | Active |
| US12002858B2 | Semiconductor device | Electricity | 0 | Active |
| US10008571B2 | Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer | Electricity | 0 | Active |
| US8884307B2 | Nitride semiconductor wafer including different lattice constants | General | 0 | Revoked |
| US12362264B2 | Semiconductor device | Electricity | 0 | Active |
| US11290100B2 | Semiconductor device | Electricity | 0 | Active |
| US8759851B2 | Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer | Electricity | 0 | Active |
| US12273101B2 | Semiconductor device | Electricity | 0 | Active |
| US9887281B2 | Semiconductor device | Electricity | 0 | Active |
| US11830916B2 | Nitride semiconductor device with element isolation area | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.