Patent · US Active

Devices with strained isolation features

US10868174B1 · kind B1 · utility

1Cited by

10References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Xusheng Wu · Hsinchu, TW
Chang-Miao Liu · Hsinchu, TW
Huiling Shang · Bethlehem, US

Key dates

Filing date	Jun 14, 2019
Grant date	Dec 15, 2020
Priority date	—
Expiry date	Jun 14, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/853
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of forming the same are provided. A semiconductor device of the present disclosure includes a first fin including a first source/drain region, a second fin including a second source/drain region, a first isolation layer disposed between the first source/drain region and the second source/drain region, and a second isolation layer disposed over the first isolation layer. A first portion of the first isolation layer is disposed on sidewalls of the first source/drain region and a second portion of the first isolation layer is disposed on sidewalls of the second source/drain region. A portion of the second isolation layer is disposed between the first portion and second portion of the first isolation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.