LED utilizing internal color conversion with light extraction enhancements

US10868213B2 · kind B2 · utility

Assignee

• LUMILEDS LLC · US

Inventors

• Robert Armitage · Katano, JP
• Isaac Wildeson · San Jose, US
• Parijat Deb · San Jose, US

Key dates

• Filing date: Jun 26, 2018
• Grant date: Dec 15, 2020
• Expiry date: Jun 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/851

Abstract

A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.