Unbalanced terahertz frequency doubler circuit with power handling capacity
US10868497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2017 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Jan 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03B2200/0084
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An unbalanced terahertz frequency doubler circuit with power handling capacity is provided, and the circuit includes a RF input waveguide, a quartz substrate and a RF output waveguide, where one end of the quartz substrate is disposed in a waveguide groove of the RF input waveguide and the other end of the quartz substrate is disposed in a waveguide groove of the RF output waveguide, where an input transition microstrip is disposed on the quartz substrate, and one end of the transition microstrip is connected to an output transition microstrip sequentially through a first transmission microstrip, a low pass filter, a RF matching microstrip and a second transmission microstrip, where anodes of four GaAs-based terahertz frequency multiplier diode groups are connected to the RF matching microstrip, and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups is connected to a grounding quartz strip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.