Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture
US10872784B2 · kind B2 · utility
0Cited by
12References
17Claims
0Family size
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Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.