Integrated circuit including a ferroelectric memory cell and manufacturing method thereof
US10872905B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2017 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Mar 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
Abstract
An integrated circuit comprises a ferroelectric memory cell comprising a ferroelectric film comprising a binary oxide ferroelectric with the formula XO2 where X represents a transition metal. The ferroelectric film is a polycrystalline film having a plurality of crystal grains, wherein the crystal grains are oriented along a predetermined crystal axis, or the ferroelectric film is a monocrystalline film, wherein the ferroelectric film comprises additives promoting formation of the crystal structure of the monocrystalline film and/or wherein the memory cell comprises a crystallinity-promoting layer that is directly in contact with the ferroelectric film and promotes formation of the crystal structure of the monocrystalline film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.