Passivation for a semiconductor light emitting device

US10873013B2 · kind B2 · utility

Assignee

• LUMILEDS LLC · US

Inventors

• Frederic Stephane Diana · San Jose, US
• Kwong-Hin Henry Choy · San Jose, US
• Qingwei Mo · Sunnyvale, US
• Serge L. Rudaz · Sunnyvale, US
• Frank Wei · Valencia, US
• Daniel A. Steigerwald · Cupertino, US

Key dates

• Filing date: Sep 26, 2018
• Grant date: Dec 22, 2020
• Expiry date: Sep 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/854

Abstract

In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.