Method for selective etching of a block copolymer
US10875236B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L33/12
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A method for etching a layer of assembled block copolymer including first and second polymer phases, the etching method including a first step of etching by a first plasma formed from carbon monoxide or a first gas mixture including a fluorocarbon gas and a depolymerising gas, the first etching step being carried out so as to partially etch the first polymer phase and to deposit a carbon layer on the second polymer phase, and a second step of etching by a second plasma formed from a second gas mixture including a depolymerising gas and a gas selected among the carbon oxides and the fluorocarbon gases, the second etching step being carried out so as to etch the first polymer phase and the carbon layer on the second polymer phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.