Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer
US10877211B2 · kind B2 · utility
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28References
20Claims
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Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Nov 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.