Techniques, system and apparatus for selective deposition of a layer using angled ions
US10879055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer is deposited on a deposition region of the substrate surface. The method may include performing a substrate scan during the directing or after the directing to transport the substrate from a first position to a second position. The method may also include directing angled ions to the substrate surface, in a presence of the layer, wherein the layer is sputter-etched from a first portion of the deposition region, and wherein the layer remains in a second portion of the deposition region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.