Method of forming barrier free contact for metal interconnects
US10879107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Nov 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first insulating layer having one or more vias formed in at least a portion of the first insulating layer. The vias are filled with a first metallic material. A cap layer is deposited on a top surface of the first insulating layer and a top surface of the one or more vias and a second insulating layer is deposited on a top surface of the cap layer. One or more openings are formed in the second insulating layer and the cap layer. A self-assembled monolayer is formed on an exposed top surface of the first metallic material in the one or more vias. A barrier layer is formed on at least the exposed surface of the one or more openings. The self-assembled monolayer is removed and the one or more openings are filled with a second metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.