Semiconductor structure
US10879172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Apr 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures are provided. A semiconductor structure includes a substrate, a conductive plate of a first metal layer over the substrate, a first resistor material of a resistor layer over the conductive plate, a high-K material formed between the first resistor material and the conductive plate, a first conductive line of a second metal layer over the resistor layer, and a first via formed between the first conductive line and the first resistor material. The conductive plate, the first resistor material and the high-K material form a capacitor between the first and second metal layers. The first distance between the first resistor material and the conductive plate is less than the second distance between the first resistor material and the first conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.