Hsiao-Lan Yang
9Patents
3h-index
18Co-inventors
46Inventor score
Filing activity: Dec 16, 2011 → Sep 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8742457B2 | Anti-fuses on semiconductor fins | Electricity | 14 | Active |
| US9040370B2 | Anti-fuses on semiconductor fins | Electricity | 6 | Active |
| US9412746B2 | Anti-fuses on semiconductor fins | Electricity | 3 | Active |
| US8659090B2 | Resistive memory and methods for forming the same | Electricity | 2 | Active |
| US10879172B2 | Semiconductor structure | Electricity | 1 | Active |
| US10790352B2 | High density capacitor implemented using FinFET | Electricity | 0 | Active |
| US11728373B2 | High density capacitor implemented using FinFET | Electricity | 0 | Active |
| US9275181B2 | Cell design | Electricity | 0 | Active |
| US11210447B2 | Reconfiguring layout and sizing for transistor components to simultaneously optimize logic devices and non-logic devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.