Die stack structure and method of fabricating the same
US10879214B2 · kind B2 · utility
3Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a die stack structure including a first die, a second die, a first bonding structure, and a second bonding structure. The first bonding structure is disposed on a back side of the first die. The second bonding structure is disposed on a front side of the second die. The first die and the second die are bonded together via the first bonding structure and the second bonding structure and a bondable topography variation of a surface of the first bonding structure bonding with the second bonding structure is less than less than 1 μm per 1 mm range. A method of manufacturing the die stack structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.