Schottky integrated high voltage terminations and related HVIC applications

US10879230B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Donald He · Redondo Beach, US
• Niraj Ranjan · El Segundo, US
• Siddharth Kiyawat · El Segundo, US
• Min Fang · Lo Wu, CN

Key dates

• Filing date: Jun 17, 2016
• Grant date: Dec 29, 2020
• Expiry date: Jul 17, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/109

Abstract

A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and the low voltage region. The Schottky diode includes a junction barrier Schottky diode or a trench metal-oxide-semiconductor (MOS) Schottky diode. The junction isolation termination includes pzener rings. The semiconductor die includes a substrate of a first conductivity type, an epitaxial layer of a second conductivity type situated on the substrate, a well region of the second conductivity type situated in the epitaxial layer in the high voltage region, and coupled to the cathode terminal, a Schottky barrier situated on the epitaxial layer in the low voltage region, and coupled to the anode terminal.