Niraj Ranjan
24Patents
7h-index
24Co-inventors
69Inventor score
Filing activity: Nov 17, 1995 → Sep 16, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5801418A | High voltage power integrated circuit with level shift operation and without metal crossover | Electricity | 35 | Expired |
| US6380004B2 | Process for manufacturing radhard power integrated circuit | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6529034B1 | Integrated series schottky and FET to allow negative drain voltage | Electricity | 16 | Expired |
| US5801431A | MOS gated semiconductor device with source metal covering the active gate | Electricity | 14 | Expired |
| US5861657A | Graded concentration epitaxial substrate for semiconductor device having resurf diffusion | Electricity | 13 | Expired |
| US6707101B2 | Integrated series schottky and FET to allow negative drain voltage | Electricity | 12 | Expired |
| US5686754A | Polysilicon field ring structure for power IC | Electricity | 10 | Expired |
| US5798538A | IGBT with integrated control | Electricity | 7 | Expired |
| US8860194B2 | Buck converter power package | Emerging Cross-Sectional Technologies | 6 | Active |
| US7183626B2 | Passivation structure with voltage equalizing loops | Emerging Cross-Sectional Technologies | 6 | Expired |
| US8878591B2 | Level shifter utilizing bidirectional signaling through a capacitive isolation barrier | Electricity | 4 | Active |
| US9245985B2 | IGBT with buried emitter electrode | Electricity | 4 | Active |
| US9859407B2 | IGBT having deep gate trench | Electricity | 2 | Active |
| US9299819B2 | Deep gate trench IGBT | Electricity | 2 | Active |
| US9590096B2 | Vertical FET having reduced on-resistance | Electricity | 2 | Active |
| US9496378B2 | IGBT with buried emitter electrode | Electricity | 1 | Active |
| US8988128B2 | Level shifter having feedback signal from high voltage circuit | Electricity | 1 | Active |
| US10879230B2 | Schottky integrated high voltage terminations and related HVIC applications | Electricity | 0 | Active |
| US9991377B2 | Trench FET with ruggedness enhancement regions | Electricity | 0 | Active |
| US9653597B2 | Method for fabricating a shallow and narrow trench FET and related structures | Electricity | 0 | Active |
| US9257983B2 | Level shifter utilizing a capacitive isolation barrier | Electricity | 0 | Active |
| US9818743B2 | Power semiconductor device with contiguous gate trenches and offset source trenches | Electricity | 0 | Active |
| US8076672B2 | Passivation structure with voltage equalizing loops | Emerging Cross-Sectional Technologies | 0 | Active |
| US11217690B2 | Trench field electrode termination structure for transistor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.