Patent · US Active

Magnetic device and magnetic random access memory

US10879307B2 · kind B2 · utility

2Cited by

3References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Wilman Tsai · Saratoga, US
Shy-Jay Lin · Hsinchu, TW
MingYuan Song · Hsinchu, TW

Key dates

Filing date	May 30, 2019
Grant date	Dec 29, 2020
Priority date	—
Expiry date	May 30, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.