Wilman Tsai
56Patents
12h-index
60Co-inventors
87Inventor score
Filing activity: Jun 18, 1990 → Nov 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5160544A | Hot filament chemical vapor deposition reactor | Chemistry; Metallurgy | 68 | Expired |
| US5126206A | Diamond-on-a-substrate for electronic applications | Emerging Cross-Sectional Technologies | 63 | Expired |
| US7208366B2 | Bonding gate oxide with high-k additives | Electricity | 52 | Expired |
| US6458495B1 | Transmission and phase balance for phase-shifting mask | Physics | 44 | Expired |
| US5186973A | HFCVD method for producing thick, adherent and coherent polycrystalline diamonds films | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5627105A | Plasma etch process and TiSi.sub.x layers made using the process | Emerging Cross-Sectional Technologies | 32 | Expired |
| US7435987B1 | Forming a type I heterostructure in a group IV semiconductor | Electricity | 24 | Active |
| US6485869B2 | Photomask frame modification to eliminate process induced critical dimension control variation | Physics | 19 | Expired |
| US7928426B2 | Forming a non-planar transistor having a quantum well channel | Electricity | 16 | Active |
| US7629603B2 | Strain-inducing semiconductor regions | Electricity | 16 | Active |
| US8936976B2 | Conductivity improvements for III-V semiconductor devices | Electricity | 13 | Active |
| US8026509B2 | Tunnel field effect transistor and method of manufacturing same | Electricity | 13 | Active |
| US5049174A | Hybrid membrane - cryogenic generation of argon concurrently with nitrogen | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6210843A | Modulation of peripheral critical dimension on photomask with differential electron beam dose | Electricity | 10 | Expired |
| US8237153B2 | Forming a non-planar transistor having a quantum well channel | Electricity | 9 | Active |
| US7777282B2 | Self-aligned tunneling pocket in field-effect transistors and processes to form same | Electricity | 8 | Active |
| US7763511B2 | Dielectric barrier for nanocrystals | Electricity | 4 | Active |
| US10056498B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US10868132B2 | Semiconductor device including standard cells with header/footer switch including negative capacitance | Electricity | 4 | Active |
| US6692878B2 | Photomask frame modification to eliminate process induced critical dimension control variation | Physics | 4 | Expired |
| US10937783B2 | Semiconductor device and manufacturing method thereof | Electricity | 3 | Active |
| US10515857B2 | Method for manufacturing semiconductor devices | Electricity | 3 | Active |
| US11043489B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Active |
| US9899505B2 | Conductivity improvements for III-V semiconductor devices | Electricity | 2 | Active |
| US10879307B2 | Magnetic device and magnetic random access memory | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.