Method of forming tin-containing material film and method of synthesizing a tin compound
US10882873B2 · kind B2 · utility
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3References
12Claims
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Key dates
| Filing date | Jan 16, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I):
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.