Patent · US Active

Gas storage cylinder, deposition system, and method of manufacturing semiconductor device

US10883173B2 · kind B2 · utility

0Cited by
8References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 26, 2018
Grant dateJan 5, 2021
Priority date
Expiry dateDec 1, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02532
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.