Method of depositing tungsten
US10886141B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jul 24, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.