Annealing method, process chamber and annealing apparatus
US10886142B2 · kind B2 · utility
0Cited by
3References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 1, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | May 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.