Method of forming negatively sloped isolation structures
US10886165B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 15, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jun 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Negatively sloped isolation structures are formed on a semiconductor substrate to isolate devices from one another. The negatively sloped isolation structures have a top critical dimension which is smaller than a bottom critical dimension. The negatively sloped isolation structures may penetrate through an insulator layer of a silicon-on-insulator structure arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.