Formation of wrap-around-contact to reduce contact resistivity
US10886376B2 · kind B2 · utility
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7References
20Claims
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Key dates
| Filing date | Nov 22, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a source/drain contact is provided. The method includes forming a sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer. The method further includes heat treating the oxidation layer and the sacrificial layer to form a modified sacrificial layer. The method further includes forming a protective liner on the modified sacrificial layer, and depositing an interlayer dielectric layer on the protective liner. The method further includes forming a trench in the interlayer dielectric layer that exposes a portion of the protective liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.