Ion implantation processes and apparatus using gallium
US10892137B2 · kind B2 · utility
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3References
18Claims
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Key dates
| Filing date | Sep 9, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Sep 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0815
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.