Substrate processing apparatus, substrate processing method, and method of fabricating semiconductor device using the same
US10892145B2 · kind B2 · utility
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6References
18Claims
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Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Jun 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.