Method of manufacturing a semiconductor device
US10892191B2 · kind B2 · utility
0Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of manufacturing a semiconductor device, includes irradiating a division region of a semiconductor wafer with laser to form a plurality of modified portions arranged in a direction along the division region in the semiconductor wafer, and splitting the semiconductor wafer into a plurality of semiconductor chips using a groove generated from the plurality of modified portions in the semiconductor wafer. The plurality of modified portions is at a first interval in a first part of the division region and at a second interval smaller than the first interval in a second part of the division region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.