Advanced lithography and self-assembled devices
US10892223B2 · kind B2 · utility
3Cited by
11References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2016 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Dec 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Advanced lithography techniques including sub-10 nm pitch patterning and structures resulting therefrom are described. Self-assembled devices and their methods of fabrication are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.