Elliot N. Tan
33Patents
4h-index
54Co-inventors
62Inventor score
Filing activity: Dec 31, 2007 → Oct 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9793159B2 | Previous layer self-aligned via and plug patterning for back end of line (BEOL) interconnects | Electricity | 13 | Active |
| US10211088B2 | Self-aligned isotropic etch of pre-formed vias and plugs for back end of line (BEOL) interconnects | Electricity | 9 | Active |
| US9558947B2 | Pattern decomposition lithography techniques | Electricity | 6 | Active |
| US8314034B2 | Feature size reduction | Electricity | 4 | Active |
| US8860184B2 | Spacer assisted pitch division lithography | Emerging Cross-Sectional Technologies | 3 | Active |
| US10409152B2 | Pattern decomposition lithography techniques | Electricity | 3 | Active |
| US10892223B2 | Advanced lithography and self-assembled devices | Electricity | 3 | Active |
| US10204830B2 | Previous layer self-aligned via and plug patterning for back end of line (BEOL) interconnects | Electricity | 3 | Active |
| US10490519B2 | Pattern decomposition lithography techniques | Electricity | 2 | Active |
| US11056492B1 | Dense memory arrays utilizing access transistors with back-side contacts | Electricity | 2 | Active |
| US9379010B2 | Methods for forming interconnect layers having tight pitch interconnect structures | Electricity | 2 | Active |
| US9659860B2 | Method and structure to contact tight pitch conductive layers with guided vias | Electricity | 1 | Active |
| US11139300B2 | Three-dimensional memory arrays with layer selector transistors | Electricity | 1 | Active |
| US7977248B2 | Double patterning with single hard mask | Electricity | 1 | Active |
| US11107786B2 | Pattern decomposition lithography techniques | Electricity | 1 | Active |
| US12080781B2 | Fabrication of thin film fin transistor structure | Electricity | 0 | Active |
| US11888043B2 | Contact over active gate structures with conductive gate taps for advanced integrated circuit structure fabrication | Electricity | 0 | Active |
| US12249541B2 | Vertical edge blocking (VEB) technique for increasing patterning process margin | Electricity | 0 | Active |
| US11373950B2 | Advanced lithography and self-assembled devices | Electricity | 0 | Active |
| US12150297B2 | Thin film transistors having a backside channel contact for high density memory | Electricity | 0 | Active |
| US11594448B2 | Vertical edge blocking (VEB) technique for increasing patterning process margin | Electricity | 0 | Active |
| US12278204B2 | Pattern decomposition lithography techniques | Electricity | 0 | Active |
| US11950407B2 | Memory architecture with shared bitline at back-end-of-line | Electricity | 0 | Active |
| US12148734B2 | Transistors, memory cells, and arrangements thereof | Electricity | 0 | Active |
| US11581412B2 | Contact over active gate structures with conductive gate taps for advanced integrated circuit structure fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.