Bonding pad architecture using capacitive deep trench isolation (CDTI) structures for electrical connection
US10892291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Feb 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate has a back side surface and a front side surface. Metallization levels are provide at the front side surface. Capacitive deep trench isolation structures extend completely through the semiconductor substrate from the front side surface to the back side surface. Each capacitive deep trench isolation structure includes a conductive region insulated from the semiconductor substrate by an insulating liner. The conductive regions at first ends of the plurality of capacitive deep trench isolation structures are electrically connected to a first metallization level by electrical contacts. A bonding pad structure is located at the back side surface of the semiconductor substrate in direct physical and electrical connection to the conductive regions at second ends of the capacitive deep trench isolation structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.