Method of making a semi-polar nitride layer on a crystalline substrate
US10892378B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Feb 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for obtaining a semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, including: etching parallel grooves from the upper surface having two opposed inclined facets, one having a crystalline orientation <111>; forming a mask above the upper surface such that the facets having <111> orientation are not masked; and then forming the layer by epitaxial growth from the non-masked facets, including: a first epitaxial growth phase to form a seed in parallel grooves; interrupting the first phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 1011; a surface treatment step including modifying an upper portion of the seed to include silicon; and a second epitaxial growth phase from the inclined facet, continuing until coalescence of seeds of adjacent parallel grooves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.