Guy Feuillet
11Patents
2h-index
25Co-inventors
54Inventor score
Filing activity: Apr 16, 1993 → Dec 22, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5349596A | Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity | Electricity | 13 | Expired |
| US11139167B2 | Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al) | Electricity | 4 | Active |
| US10553426B2 | Method for obtaining a semi-polar nitride layer on a crystalline substrate | Electricity | 2 | Active |
| US7906362B2 | Assembling two substrates by molecular adhesion | Emerging Cross-Sectional Technologies | 1 | Expired |
| US10892378B2 | Method of making a semi-polar nitride layer on a crystalline substrate | Electricity | 0 | Active |
| US12080824B2 | Method for producing an optoelectronic device comprising microLEDs | Electricity | 0 | Active |
| US12278224B2 | Method for producing nitride mesas each intended to form an electronic or optoelectronic device | Electricity | 0 | Active |
| US8852997B2 | Method for removing residual extrinsic impurities in an N type ZnO or ZnMgO substrate, for P-type doping of this substrate | Electricity | 0 | Active |
| US12252807B2 | Process for obtaining a nitride layer | Electricity | 0 | Active |
| US12134836B2 | Method for producing a nitride layer | Electricity | 0 | Active |
| US10615299B2 | Optoelectronic device with three-dimensional semiconductor elements | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.