Etched trenches in bond materials for die singulation, and associated systems and methods
US10892384B2 · kind B2 · utility
1Cited by
17References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2018 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Jul 3, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially, encapsulated in a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.