Magnetic memory device
US10892400B2 · kind B2 · utility
4Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Aug 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.