Eun-sun Noh
3Patents
2h-index
10Co-inventors
37Inventor score
Filing activity: Nov 4, 2014 → Jul 16, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9306156B2 | Methods of manufacturing a magnetoresistive random access memory device | Electricity | 5 | Active |
| US10892400B2 | Magnetic memory device | Electricity | 4 | Active |
| US10847713B2 | Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.