Switching device, method of fabricating the same, and non-volatile memory device having the same
US10892409B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 18, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Jan 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/881
Abstract
The present invention relates to a switching device, a method of fabricating the same, and a nonvolatile memory device including the same. A switching device according to an embodiment of the present invention includes a first electrode; a second electrode; and a switching film which is disposed between the first electrode and the second electrode, and includes an electrically insulating matrix and a conductive path formed in the electrically insulating matrix. In this embodiment, the conductive path includes crystalline metal clusters dispersed in the electrically insulating matrix and a metal bridge connecting adjacent crystalline metal clusters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.