Variable resistance memory devices and methods of manufacturing variable resistance memory devices
US10892410B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jul 2, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Jul 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A variable resistance memory device may include insulating layers stacked on a substrate, a first conductive line penetrating the insulating layers, switching patterns between the insulating layers, a phase change pattern between the first conductive line and each of the switching patterns, and a capping pattern disposed between the phase change pattern and the first conductive line and disposed in a region surrounded by the phase change pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.