Inventor · Hwaseong-si, KR

Dongho Ahn

23Patents
4h-index
43Co-inventors
59Inventor score

Filing activity: Oct 29, 2009 → Sep 29, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8263455B2 Method of forming variable resistance memory device Electricity 13 Active
US8278206B2 Variable resistance memory device and methods of forming the same Physics 10 Active
US8501623B2 Method of forming a semiconductor device having a metal silicide and alloy layers as electrode Electricity 5 Active
US8558348B2 Variable resistance memory device and methods of forming the same Physics 4 Active
US9985204B2 Semiconductor memory device Electricity 2 Active
US11581367B2 Semiconductor device Physics 1 Active
US11037992B2 Variable resistance memory device Electricity 0 Active
US12431351B2 Method of forming germanium antimony tellurium film Electricity 0 Active
US12268105B2 Semiconductor apparatus Electricity 0 Active
US12426264B2 Semiconductor devices and data storage systems including the same Electricity 0 Active
US11616197B2 Variable resistance memory device Electricity 0 Active
US12063793B2 Chalcogen compound and semiconductor device including the same Electricity 0 Active
US11744167B2 Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer Electricity 0 Active
US12101942B2 Semiconductor device including chalcogen compound and semiconductor apparatus including the same Electricity 0 Active
US12396379B2 Semiconductor devices Electricity 0 Active
US12414309B2 Memory device including phase-change material Electricity 0 Active
US12324166B2 Resistive memory device Physics 0 Active
US11818899B2 Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same Electricity 0 Active
US12426275B2 Switching device and memory device including the same Physics 0 Active
US12232429B2 Semiconductor device including data storage material pattern Electricity 0 Active
US12185647B2 Variable resistance memory device Electricity 0 Active
US12254922B2 Memory device including switching material and phase change material Electricity 0 Active
US10892410B2 Variable resistance memory devices and methods of manufacturing variable resistance memory devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.