Systems and methods for combined x-ray reflectometry and photoelectron spectroscopy
US10895541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Dec 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G1/30
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.