Semiconductor memory device and NAND-type flash memory erase method
US10896736B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2019 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | May 8, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor memory device capable of performing rapid erasing while reducing power consumption. In the flash memory of the present invention, the voltage of the P well is detected by the voltage detecting unit 200 during the erasing operation. When the voltage is lower than the threshold value, it is determined that the off leakage current of the selection transistor of the non-selection block is large, and the voltage of the global word line at the time of applying the next erase pulse is increased. When the voltage is above the threshold value, it is determined that the off leakage current is small, and the voltage of the global word line at the time of applying the next erase pulse is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.